? 2005 ixys all rights reserved features high peak current capability low saturation voltage mos gate turn-on -drive simplicity rugged npt structure international standard packages - jedec to-268 and - jedec to-247 ad molding epoxies meet ul 94 v-0 flammability classification applications capacitor discharge pulser circuits advantages high power density suitable for surface mounting easy to mount with 1 screw, (isolated mounting screw hole) v ces = 1600 v i c25 =75a v ce(sat) = 2.5 v ixgh 25n160 ixgt 25n160 g = gate, c = collector, e = emitter, tab = collector ds99381(12/05) symbol test conditions maximum ratings v ces t j = 25c to 150c 1600 v v cgr t j = 25c to 150c; r ge = 1 m 1600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 75 a i c110 t c = 110c 25 a i cm t c = 25c, v ge = 20 v, 1 ms 200 a ssoa v ge = 15 v, t vj = 125c, r g = 20 i cm = 100 a (rbsoa) clamped inductive load @ 0.8 v ces p c t c = 25c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s maximum tab temperature for soldering smd devices for 10 s 260 c m d mounting torque (to-247) 1.13/10 nm/lb-in weight to-247 6 g to-268 4 g high voltage igbt for capacitor discharge applications symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 1600 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = 0.8 ? v ces 50 a v ge = 0 v t j = 125c 1 ma i ges v ce = 0 v, v ge = 30 v 100 na v ce(sat) i c = i c110 , v ge = 15 v 2.5 v i c = 100 a, v ge = 20 v 4.7 v c (tab) g c e to-247 (ixgh) to-268 (ixgt) g e c (tab) preliminary data sheet
ixys reserves the right to change limits, test conditions, and dimensions. ixgh 25n160 ixgt 25n160 ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 ad outline symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 50 a; v ce = 10 v, note 1 14 21 s i c(on) v ge = 15v, v ce = 10v, note 1 200 a c ies v ce = 25 v, v ge = 0 v, f = 1 mhz 2090 pf c oes 94 pf c res 34 pf q g i c = 50 a, v ge = 15 v, v ce = 0.5 v ces 84 nc q ge 15 nc q gc 37 nc t d(on) 47 ns t ri 236 ns t d(off) 86 ns t fi 440 ns r thjc 0.42 k/w r thck (to-247) 0.25 k/w resistive load i c = 100 a, v ge = 15 v, note 1 v ce = 1200 v, r g = 10 to-268 outline dim. millimeter inches min. max. min. max. a 4.9 5.1 .193 .201 a 1 2.7 2.9 .106 .114 a 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 c .4 .65 .016 .026 d 13.80 14.00 .543 .551 e 15.85 16.05 .624 .632 e 1 13.3 13.6 .524 .535 e 5.45 bsc .215 bsc h 18.70 19.10 .736 .752 l 2.40 2.70 .094 .106 l1 1.20 1.40 .047 .055 l2 1.00 1.15 .039 .045 l3 0.25 bsc .010 bsc l4 3.80 4.10 .150 .161 notes: 1. pulse test, t < 300 s, duty cycle < 2 % to-268: minimum recommended footprint preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a subjective pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2005 ixys all rights reserved ixgh 25n160 ixgt 25n160 fig. 1. output characteristics @ 25oc 0 25 50 75 100 125 150 0123456 v ce - volts i c - amperes v ge = 25v 20v 15v 10v fig. 2. exteded output characteristics @ 25oc 0 25 50 75 100 125 150 175 200 225 250 275 0 2 4 6 8 10 12 14 16 18 20 v ce - volts i c - amperes v ge = 25v 15v 10v 20v fig. 3. output characteristics @ 125oc 0 25 50 75 100 125 150 012345678 v ce - volts i c - amperes v ge = 25v 20v 10v 15v fig. 4. dependence of v ce(sat) on junction temperature 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 150a i c = 100a i c = 50a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 2 3 4 5 6 7 8 9 10 7 9 11 13 15 17 19 21 23 25 v ge - volts v ce - volts i c = 150a 100a 50a t j = 25oc fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 200 4 5 6 7 8 9 10 11 12 13 14 15 v ge - volts i c - amperes t j = - 40oc 25oc 125oc
ixys reserves the right to change limits, test conditions, and dimensions. ixgh 25n160 ixgt 25n160 fig. 7. transconductance 0 3 6 9 12 15 18 21 24 27 0 20 40 60 80 100 120 140 160 180 200 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 8. resistive turn-on rise time vs. junction temperature 160 200 240 280 320 360 400 440 480 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 10 v ge = 15v v ce = 1200v i c = 150a i c = 100a i c = 50a fig. 9. resistive turn-on rise time vs. collector current 140 180 220 260 300 340 380 420 460 500 50 60 70 80 90 100 110 120 130 140 150 i c - amperes t r - nanosecond s r g = 10 v ge = 15v v ce = 1200v t j = 125oc t j = 25oc fig. 10. resistive turn-on switching times vs. gate resistance 200 250 300 350 400 450 500 550 600 650 700 10 15 20 25 30 35 40 45 50 r g - ohms t r - nanosecond s 42 46 50 54 58 62 66 70 74 78 82 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 1200v i c = 50a, 100a i c = 150a fig. 11. resistive turn-off switching times vs. junction temperature 100 200 300 400 500 600 700 800 900 1000 1100 1200 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 70 75 80 85 90 95 100 105 110 115 120 125 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 10 , v ge = 15v v ce = 1200v i c = 50a i c = 100a, 150a fig. 12. resistive turn-off switching times vs. collector current 180 340 500 660 820 980 1140 50 60 70 80 90 100 110 120 130 140 150 i c - amperes t f - nanosecond s 76 84 92 100 108 116 124 t d ( o f f ) - nanosecond s t f t d(off) - - - - r g = 10 , v ge = 15v v ce = 1200v t j = 25oc t j = 25oc
? 2005 ixys all rights reserved ixgh 25n160 ixgt 25n160 fig. 13. resistive turn-off switching times vs. gate resistance 200 300 400 500 600 700 800 900 1000 10 15 20 25 30 35 40 45 50 r g - ohms t f - nanosecond s 50 100 150 200 250 300 350 400 450 t d ( o f f ) - nanosecond s t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 1200v i c = 50a i c = 150a, 100a fig. 14. gate charge 0 2 4 6 8 10 12 14 16 0 102030405060708090 q g - nanocoulombs v ge - volts v ce = 800v i c = 50a i g = 10 ma fig. 15. reverse-bias safe operating area 0 10 20 30 40 50 60 70 80 90 100 110 200 400 600 800 1000 1200 1400 1600 v ce - volts i c - amperes t j = 125oc r g = 20 dv / dt < 10v / ns fig. 16. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mhz c ies c oes c res fig. 17. maximum transient thermal resistance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r (th)jc - oc / w
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